To prepare SiN x thin film with good compactness, fast deposition rate and stable performance, plasma-enhanced chemical vapour deposition (PECVD) is adopted to study the influences of different technological parameters on the properties of SiN x thin film. The experimental results indicate that SiH 4 and NH 3 flow rate, temperature, radio-frequency power, pressure and other technological parameters all have influences on the properties of SiN x thin film. Among them, the flow ratio of SiH 4 /NH

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... 3 has crucial influences on the refractivity of SiN x ; and SiH 4 flow rate and radio-frequency power have important influences on the deposition rate of SiN x . According to the discussion results, the optimal technological conditions to prepare SiN x thin film are obtained, with the refractivity of SiN x of 2.2 and deposition rate of 34.79 nm/min. It is proved that PECVD can be utilized to prepare high-quality SiN x thin film with controllable refractivity and deposition rate.