Epitaxial thin films of the giant-dielectric-constant material CaCu3Ti4O12 grown by pulsed-laser deposition

W. Si, E. M. Cruz, P. D. Johnson, P. W. Barnes, P. Woodward, A. P. Ramirez
2002 Applied Physics Letters  
Pulsed-laser deposition has been used to grow epitaxial thin films of the giant-dielectric-constant material CaCu_3Ti_4O_12 on LaAlO_3 and SrTiO_3 substrates with or without various conducting buffer layers. The latter include YBa_2Cu_3O_7, La_1.85Sr_0.15CuO_4+δ and LaNiO_3. Above 100K - 150K the thin films have a temperature independent dielectric constant as do single crystals. The value of the dielectric constant is of the order of 1500 over a wide temperature region, potentially making it a
more » ... good candidate for many applications. The frequency dependence of its dielectric properties below 100K - 150K indicates an activated relaxation process.
doi:10.1063/1.1506951 fatcat:kipqdqydlvcbzdp5nbqcuspymm