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A 1.2 V GaAs power pseudomorphic high electron mobility transistors (PHEMT's) for personal handy phone system (PHS) handset application was developed. The power PHEMT has a dual delta doped AlGaAs/InGaAs/GaAs based structure with compact device layout. The 6.72 mm device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2 V drain bias with an output power of 22.18 dBm. Under 1.9 GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS signal, the device shows an adjacentdoi:10.1143/jjap.39.l1019 fatcat:asv2viwe2vd7jlnzrxtdrppvzy