Microwave characterization of (Pb,La)TiO3 thin films integrated on ZrO2∕SiO2∕Si wafers by sol-gel techniques

Z. T. Song, Y. Wang, H. L. W. Chan, C. L. Choy, S. L. Feng
2004 Applied Physics Letters  
Polycrystalline perovskite lead lanthanum titanate (PLT) thin films were prepared by a sol-gel method on ZrO 2 / SiO 2 / Si substrates. The structure of the films was studied by x-ray diffraction and scanning electron microscopy, and the microwave dielectric properties characterized on a network analyzer. A strong dependence of the dielectric constant of PLT films and, correspondingly, the resonance frequency of PLT-based interdigital capacitor on the sample preparation conditions were
more » ... They resulted from the structural transformation of PLT from a layered structure to a uniform film as the annealing temperature was raised from 550 to 700°C, suggesting a possible way to modify the device performance by controlling the layered structure of the ferroelectric film.
doi:10.1063/1.1823038 fatcat:ojupdr7mbrczldxvqjtazhuupa