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GaN-based Matrix Converter Design with Output Filters for Motor Friendly Drive System
2020
Energies
This paper introduces a gallium nitride (GaN) high electron mobility transistor (HEMT)-based matrix converter for motor friendly drive systems. A fast switching characteristic of the GaN devices causes high dv/dt. This increases the importance of noise immunity and the reduction of parasitic components in system design. In addition, the high dv/dt in motor drive systems leads to voltage spike at a motor input terminal and leakage current through a motor chassis. Accordingly, a gate drive
doi:10.3390/en13040971
fatcat:tueabrwqufepjjcpmllbqfrtcu