Research on memory devices is a highly active field and many new technologies are being constantly developed. However, characterising them and understanding how to bias for optimal performance is becoming an increasingly tight bottleneck. Here we propose a novel technique for extracting biasing parameters conducive to desirable switching behaviour in a highly automated manner, thereby shortening process development cycles. The principle of operation is based on first: applying variable

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... , pulse-mode stimulation on a test device in order to induce switching multiple times, next: collecting data on how pulsing parameters affect the device's resistive state and finally: choosing the most suitable biasing parameters for the application at hand. The utility of the proposed technique is validated on T iOx-based prototypes, where we demonstrate the successful extraction of biasing parameters that allow operation of our devices both as multi-state and binary resistive switches.