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Fabrication of high-speed resonant cavity enhanced Schottky photodiodes
1997
IEEE Photonics Technology Letters
We report the fabrication and testing of a GaAsbased high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0 08Ga0 S L A~) and a distributed A1As-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo
doi:10.1109/68.588199
fatcat:aaxagiblcvbnfjrgt5srvszsra