Fabrication of high-speed resonant cavity enhanced Schottky photodiodes

E. Ozbay, M.S. Islam, B. Onat, M. Gokkavas, O. Aytur, G. Tuttle, E. Towe, R.H. Henderson, M. Selim Unlu
1997 IEEE Photonics Technology Letters  
We report the fabrication and testing of a GaAsbased high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0 08Ga0 S L A~) and a distributed A1As-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo
more » ... se had a resonance around 895 nm, in good agreement with our simulations. The full-widthat-half-maximum (FWMM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz. Zndex Terms-High-speed circuits/devices, photodetectors, photodiodes, resonant caity enhancement, Schottky diodes.
doi:10.1109/68.588199 fatcat:aaxagiblcvbnfjrgt5srvszsra