The rapid emergence of gallium-nitride (GaN) light-emitting diodes for solid-state lighting has created a timely opportunity for optical communications using visible light. One important challenge to address this opportunity is to extend the wavelength coverage of GaN LEDs without compromising their modulation properties. Here, a hybrid source for emission at 540 nm consisting of a 450nm GaN micro-sized LED (micro-LED) with a micron-thick ZnCdSe/ZnCdMgSe multi-quantum-well color-converting

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... ane is reported. The membrane is liquid-capillarybonded directly onto the sapphire window of the micro-LED for full hybridization. At an injection current of 100 mA, the color-converted power was found to be 37 W. At this same current, the -3dB optical modulation bandwidth of the bare GaN and hybrid micro-LEDs were 79 MHz and 51 MHz, respectively. The intrinsic bandwidth of the colorconverting membrane was found to be power-density independent over the range of the micro-LED operation at 145 MHz, which corresponds to a mean carrier lifetime of 1.9 ns.