PREVAIL—Electron projection technology approach for next-generation lithography

R. S. Dhaliwal, W. A. Enichen, S. D. Golladay, M. S. Gordon, R. A. Kendall, J. E. Lieberman, H. C. Pfeiffer, D. J. Pinckney, C. F. Robinson, J. D. Rockrohr, W. Stickel, E. V. Tressler
2001 IBM Journal of Research and Development  
This paper is an overview of work in the IBM Microelectronics Division to extend electronbeam lithography technology to the projection level for use in next-generation lithography. The approach being explored-Projection Reduction Exposure with Variable Axis Immersion Lenses (PREVAIL)-combines the high exposure efficiency of massively parallel pixel projection with scanning-probe-forming systems to dynamically correct for aberrations. In contrast to optical lithography systems, electron-beam
more » ... ography systems are not diffraction-limited, and their ultimate attainable resolution is, for practical purposes, unlimited. However, their throughput has been-and continues to be-the major challenge in electron-beam lithography. The work described here, currently continuing, has been undertaken to address that challenge. Novel electron optical methods have been used and their feasibility ascertained by Dynamic correction x : 225 nm; y : 225 nm x : 12 nm; y : 14 nm Key (0.25 m) Key (0.25 m) Key (0.25 m) IBM
doi:10.1147/rd.455.0615 fatcat:6mwjd6woufal7d6i7hby7sriti