The performance ofin situgrown Schottky-barrier single wall carbon nanotube field-effect transistors

Zhixian Zhou, Gyula Eres, Rongying Jin, Alaska Subedi, David Mandrus, Eugene H Kim
2009 Nanotechnology  
Electrical transport measurements were used to study device behavior that results from the interplay of defects and inadvertent contact variance that develops in as-grown semiconducting single wall carbon nanotube devices with nominally identical Au contacts. The transport measurements reveal that as-grown nanotubes contain defects that limit the performance of field-effect transistors with ohmic contacts. In Schottky-barrier field-effect transistors the device performance is dominated by the
more » ... dominated by the Schottky barrier and the nanotube defects have little effect. We also observed strong rectifying behavior attributed to extreme contact asymmetry due to the different nanoscale roughness of the gold contacts formed during nanotube growth.
doi:10.1088/0957-4484/20/8/085709 pmid:19417470 fatcat:edbowyhczvbmto73rbzne7ggmi