MMIC class-F power amplifiers using field-plated GaN HEMTs

S. Gao, C. Sanabria, H. Xu, S.I. Long, S. Heikman, U. Mishra, R.A. York
2006 IEE Proceedings - Microwaves Antennas and Propagation  
Class-F microwave monolithic integrated circuit (MMIC) power amplifiers ( PA) fabricated in a GaN technology are reported. Field-plated GaN HEMT devices are used for highpower performance. Two MMICs are reported. The first class-F MMIC PA operating at 2.0 GHz achieved a power-added efficiency (PAE) of 50% with 38 dBm output power and 6.2 W/mm power density. A second class-F PA operating at 2.8 GHz achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.
doi:10.1049/ip-map:20050246 fatcat:5yvahc24bvdurdzp7vtxxvtzyy