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MMIC class-F power amplifiers using field-plated GaN HEMTs
2006
IEE Proceedings - Microwaves Antennas and Propagation
Class-F microwave monolithic integrated circuit (MMIC) power amplifiers ( PA) fabricated in a GaN technology are reported. Field-plated GaN HEMT devices are used for highpower performance. Two MMICs are reported. The first class-F MMIC PA operating at 2.0 GHz achieved a power-added efficiency (PAE) of 50% with 38 dBm output power and 6.2 W/mm power density. A second class-F PA operating at 2.8 GHz achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.
doi:10.1049/ip-map:20050246
fatcat:5yvahc24bvdurdzp7vtxxvtzyy