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Formation of a precursor layer in self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy

C S Yang, J S Wang, Y J Lai, C W Luo, D S Chen, Y T Shih, S R Jian, W C Chou
2007 Nanotechnology  

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The growth mode of CdTe quantum dots (QDs) grown on highly lattice-mismatched ZnSe buffer was investigated. CdTe QDs (0.6 to 5.0 mono-layers (MLs)) were deposited on the Se-stabilized ZnSe buffer layers using an alternating supply of Cd and Te atomic sources. Cross-sectional transmission electron microscopy and photoluminescence (PL) measurements revealed the existence of a CdSe-like two-dimensional precursor layer (PCL). The prominent difference in the temperature-dependent PL peak shift was
more » ... sociated with the emissions from the respective CdSe PCL and CdTe QDs. In addition, the PL excitation measurement demonstrated the existence of the first QD excited excitonic state.
doi:10.1088/0957-4484/18/38/385602 fatcat:mhcyaxh5yzchndmuuqueqpdblm
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C S Yang, J S Wang, Y J Lai, C W Luo, D S Chen, Y T Shih, S R Jian, W C Chou. "Formation of a precursor layer in self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy." Nanotechnology 18.38 (2007) 385602