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Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: nanopore density control

Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka, Junhao Chu, Zhanshan Wang
2010 Seventh International Conference on Thin Film Physics and Applications  

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We have investigated the nanopore formation utilizing SiC/Si (001) heteroepitaxial growth. Inverse pyramidal pits were produced by {111} faceted on the top of Si layer of Silicon on Insulator (001) substrate after SiC growth by using CH 3 SiH 3 pulse jet chemical vapor deposition. Randomly distributed nanopores with the size of 10 nm were obtained after dipped into BHF solution for etching the buried oxide layer through the top of the pit. It was found that the densities of the pits and the
more » ... opores strongly depend on the initial SiC nucleation density which can be controlled by the pulse frequency and number of CH 3 SiH 3 pulse jets.
doi:10.1117/12.888388 fatcat:cm62bbbs2fhj5m2scy5z3nxiq4
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Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka, Junhao Chu, Zhanshan Wang. "Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: nanopore density control." Seventh International Conference on Thin Film Physics and Applications (2010)