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Deposition of CuInSe2Thin Films Using Stable Copper and Indium-selenide Precursors through Two-stage MOCVD Method
2009
Bulletin of the Korean Chemical Society (Print)
Highly polycrystalline copper indium diselenide (CuInSe2, CIS) thin films were deposited on glass or ITO glass substrates by two-stage metal organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cuand In/Se-containing precursors. First, pure Cu thin film was prepared on glass or ITO glass substrates by using a single-source precursor, bis(ethylbutyrylacetate)copper(II) or bis(ethylisobutyrylacetato)copper(II). Second, on the resulting Cu films,
doi:10.5012/bkcs.2009.30.4.853
fatcat:hter4kb7jzevjmmv66ukynnham