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A 5.8 GHz Linear Power Amplifier in a Standard 90nm CMOS Process using a 1V Power Supply
2007
Digest papers - IEEE Radio Frequency integrated Circuits (RFIC) Symposium
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A fully integrated 5.8 GHz Class AB linear power amplifier (PA) in a standard 90nm CMOS process using thin oxide transistors utilizes a novel on-chip transformer power combining network. The transformer combines the power of four push-pull stages with low insertion loss over the bandwidth of interest and is compatible with standard CMOS process without any additional analog or RF enhancements. With a 1 V power supply, the PA achieves 24.3dBm maximum output power at a peak drain efficiency of
doi:10.1109/rfic.2007.380917
fatcat:q2zuw2omuzgrzkigu5bp4lycgq