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Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration
2014
Optics Express
We report room-temperature Raman scattering studies of nominally undoped (100) GaAs 1−x Bi x epitaxial layers exhibiting Biinduced (p-type) longitudinal-optical-plasmon-coupled (LOPC) modes for 0.018 ≤ x ≤ 0.048. Redshifts in the GaAs-like optical modes due to alloying are evaluated and are paralleled by strong damping of the LOPC. The relative integrated Raman intensities of LO(Γ) and LOPC A LO /A LOPC are characteristic of heavily doped p-GaAs, with a remarkable near total screening of the
doi:10.1364/oe.22.011680
pmid:24921290
fatcat:5hlyndxxwvgypk6j5mcmgg5biq