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Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode
The all-sputtered Al/SiO2/p-GaN metal-oxide-semiconductor (MOS) Schottky diode was fabricated by the cost-effective radio-frequency sputtering technique with a cermet target at 400 °C. Using scanning electron microscope (SEM), the thicknesses of the electrodes, insulator SiO2 layer, and p-GaN were found to be ~250 nm, 70 nm, and 1 µm, respectively. By Hall measurement of a p-Mg-GaN film on an SiO2/Si (100) substrate at room temperature, the hole's concentration (Np) and carrier mobility (μ)doi:10.3390/coatings9100685 fatcat:sjmgh64yejc55ap3oghaeyipqq