Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H

Hideyo Okushi, Katumi Nakagawa, Satoshi Yamasaki, Hideo Yamamoto, Akihisa Matsuda, Mitsuo Matsumura, Kazunobu Tanaka, Sigeru Iizima
1981 Japanese Journal of Applied Physics  
doi:10.7567/jjaps.20s2.205 fatcat:qypfrhb7nnhkzbkenklsv5a2b4