COMPOSITION FLUCTUATIONS IN III-V SEMICONDUCTORS

R. A.D. MACKENZIE, J.A . LIDDLE, C. R.M. GROVENOR, A. CEREZO
1989 Le Journal de Physique Colloques  
Electron microscopy studies have previously revealed the presence of fine scale (lOnm) variations of contrast within III-V compound semiconductor epilayers. Using a pulsed laser atom probe it has been possible to study the microchemistry of these layers at very high resolution. This study has shown that in epilayers of GalnAs, AlInAs and GaAHnAs there are variations of up to 10% in composition. In the GaAHnAs system the epilayer is seen to cluster towards small regions of GalnAs and GaAlAs.
more » ... nAs and GaAlAs. Preliminary experiments using a positionsensitive atom probe have confirmed that the composition variations can be further quantified using three dimensional microanalysis techniques.
doi:10.1051/jphyscol:1989877 fatcat:6lko2fzjsnbsfccpwatl3aqdhm