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Electron microscopy studies have previously revealed the presence of fine scale (lOnm) variations of contrast within III-V compound semiconductor epilayers. Using a pulsed laser atom probe it has been possible to study the microchemistry of these layers at very high resolution. This study has shown that in epilayers of GalnAs, AlInAs and GaAHnAs there are variations of up to 10% in composition. In the GaAHnAs system the epilayer is seen to cluster towards small regions of GalnAs and GaAlAs.doi:10.1051/jphyscol:1989877 fatcat:6lko2fzjsnbsfccpwatl3aqdhm