A novel charge pump system with new regulation and clock generating techniques is proposed and verified in a 0.13 µm CMOS process. Rather than generating the reference voltage by band-gap reference (BGR) and the detected voltage by high voltage divider in the conventional regulation, both voltage reference and division of proposed pump system are implemented by single new circuit. Besides, the conventional oscillator for clock input of charge pump system is removed while an adaptive clock

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... daptive clock generation scheme is introduced to reduce the power consumption and shrink the system size. The experiment results show that the pump system can produce a stable and smooth output with a small ripple, and the high output accuracy is comparable to the conventional solution equipped with BGR. Moreover, the power consumption of the pump controlling is reduced by about 80% while the size of pump system is decreased by about 25%. Therefore, the proposed regulated charge pump (RCP) is very suitable for ultra-low power and high precision applications, for example, the embedded nonvolatile memories (eNVMs).