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Annealing native oxide covered GaAs samples in Arsine͑AsH 3 ͒ prior to atomic-layer-deposition of Al 2 O 3 with trimethyaluminum ͑TMA͒ and isopropanol ͑IPA͒ results in capacitance-voltage ͑C-V͒ characteristics of the treated samples that resemble the superior C-V characteristics of p-type GaAs grown by an in situ metal-organic chemical vapor deposition process. Both TMA and IPA show self-cleaning effect on removing the native oxide in ex situ process, little evidence of a native oxide wasdoi:10.1063/1.3213545 fatcat:2udw2656yrexra72b55rhtexhy