High performance 0.1 /spl mu/m dynamic threshold MOSFET using indium channel implantation

Sun-Jay Chang, Chun-Yen Chang, Tien-Sheng Chao, Tiao-Yuan Huang
2000 IEEE Electron Device Letters  
In this letter, we demonstrate a high-performance 0.1 m Dynamic Threshold Voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., 0 7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low th simutaneously, which results in an excellent performance for the indium-implanted DTMOS. Index Terms-DTMOS, indium SSR.
doi:10.1109/55.823577 fatcat:xeoizfa35bb35gqprspgybm6nm