A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is
In this letter, we demonstrate a high-performance 0.1 m Dynamic Threshold Voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., 0 7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low th simutaneously, which results in an excellent performance for the indium-implanted DTMOS. Index Terms-DTMOS, indium SSR.doi:10.1109/55.823577 fatcat:xeoizfa35bb35gqprspgybm6nm