Evaluation of accuracy of SiC-JFET macromodel

Kamil Bargieł, Damian Bisewski, R. Nawrowski, J. Lorenc, Z. Nadolny, A. Tomczewski, J. Jajczyk, L. Kasprzyk, A. Bugała, K. Budnik
2018 ITM Web of Conferences  
In the paper, the results of experimental verification of the macromodel of UJN1208K JFET transistor made of silicon carbide fabricated by United Silicon Carbide, are presented. The macromodel form dedicated for PSPICE program is available on the manufacturer's website. The accuracy of the macromodel have been evaluated by comparison of selected calculated and measured static characteristics and C-V characteristics of the considered transistor. The influence of ambient temperature on the
more » ... eristics of the transistor has been evaluated, as well.
doi:10.1051/itmconf/20181901027 fatcat:6fpqfp2efjeutbwatmmrxbo5ry