Change of the surface structure during homoepitaxial growth of Si on Si(111)-7×7 surface
28p-YM-4 Si(111)-7×7表面上のホモエピタキシャル成長中の構造変化

Y. FUKAYA, Y. SHIGETA
1998 Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu)  
doi:10.11316/jpsgaiyo.53.2.2.0_407_3 fatcat:kw3ozooscja6hb65jybkxjo5vy