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Change of the surface structure during homoepitaxial growth of Si on Si(111)-7×7 surface
28p-YM-4 Si(111)-7×7表面上のホモエピタキシャル成長中の構造変化
1998
Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu)
28p-YM-4 Si(111)-7×7表面上のホモエピタキシャル成長中の構造変化