A Review of techniques used in Lateral Insulated Gate Bipolar Transistor (LIGBT)

Elizabeth Kho Ching Tee
2012 IOSR Journal of Electrical and Electronics Engineering  
The huge demand for high voltage, high current power devices on Silicon on Chip (SoC) has led to the development of Lateral Insulated Gate Bipolar Transistor (Lateral IGBT/ LIGBT), touted as the best candidate to serve these two purposes. This paper is the first to review the research works on techniques used in LIGBTs published till now. The LIGBTs are categorized into four types based on different technologies applied, mainly junction isolation (JI), silicon on insulator (SOI), partial SOI
more » ... OI) and membrane, and ten varieties based on their device mechanisms, such as reverse conducting, trench gate and super junction.
doi:10.9790/1676-0313552 fatcat:ab2peihfsrfkxjomjwdkmahthu