A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is
The huge demand for high voltage, high current power devices on Silicon on Chip (SoC) has led to the development of Lateral Insulated Gate Bipolar Transistor (Lateral IGBT/ LIGBT), touted as the best candidate to serve these two purposes. This paper is the first to review the research works on techniques used in LIGBTs published till now. The LIGBTs are categorized into four types based on different technologies applied, mainly junction isolation (JI), silicon on insulator (SOI), partial SOIdoi:10.9790/1676-0313552 fatcat:ab2peihfsrfkxjomjwdkmahthu