A 0.2 V, 480 kb Subthreshold SRAM With 1 k Cells Per Bitline for Ultra-Low-Voltage Computing

Tae-Hyoung Kim, Jason Liu, John Keane, Chris H. Kim
2008 IEEE Journal of Solid-State Circuits  
doi:10.1109/jssc.2007.914328 fatcat:dart62szqrflzcx5rkkb2dzsb4