Internet Archive Scholar

A 0.2 V, 480 kb Subthreshold SRAM With 1 k Cells Per Bitline for Ultra-Low-Voltage Computing

Tae-Hyoung Kim, Jason Liu, John Keane, Chris H. Kim
2008 IEEE Journal of Solid-State Circuits  

Preserved Fulltext

fulltext thumbnail
Web Archive Capture PDF (3.1 MB)
https://web.archive.org/web/20170814135505/https://dr.ntu.edu.sg/bitstream/handle/10220/6332/A%200.2%20V,%20480%20kb%20Subthreshold%20SRAM%20With%201%20k%20Cells%20Per%20Bitline%20for%20Ultra-Low-Voltage%20Computing.pdf?sequence=1

A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL. The file type is application/pdf.

doi:10.1109/jssc.2007.914328 fatcat:dart62szqrflzcx5rkkb2dzsb4
Citation

Tae-Hyoung Kim, Jason Liu, John Keane, Chris H. Kim. "A 0.2 V, 480 kb Subthreshold SRAM With 1 k Cells Per Bitline for Ultra-Low-Voltage Computing." IEEE Journal of Solid-State Circuits 43.2 (2008) 518-529