A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is application/pdf.
Tae-Hyoung Kim, Jason Liu, John Keane, Chris H. Kim. "A 0.2 V, 480 kb Subthreshold SRAM With 1 k Cells Per Bitline for Ultra-Low-Voltage Computing." IEEE Journal of Solid-State Circuits 43.2 (2008) 518-529