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Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX
IEEE Transactions on Nuclear Science
We investigate the proton tolerance of fullydepleted SOI MOSFETs with H-gate and regular-gate structural configurations. For the front-gate characteristics, the H-gate does not show the edge leakage observed in the regular-gate transistor. An anomalous kink in the back-gate linear I D -V GS characteristics of the fully-depleted SOI nFETs has been observed at high radiation doses. This kink is attributed to charged traps generated in the bandgap at the buried oxide/silicon film interface duringdoi:10.1109/23.983187 fatcat:2xov76godndpthglhsowfapxnm