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Uniformity measurements of large-area indium gallium arsenide and germanium photodetectors
2018
Journal of Physics, Conference Series
Preserved Fulltext
The properties of six large area semiconductor photodetectors were investigated in the near infrared wavelength range. For potential use as transfer standard detectors in absolute spectral responsivity calibrations, the spatial uniformity and spectral responsivity of four InGaAs and two Ge photodiodes were characterized. Spatial uniformity measurements carried out at 1000 nm, 1550 nm, and 1650 nm show that photodiode spatial non-uniformity changes with wavelength for both InGaAs and Ge
doi:10.1088/1742-6596/1065/8/082010
fatcat:xkssgj6iqvcsfef4i2ks4wwo4e