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Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System
1980
Progress of theoretical physics
Preserved Fulltext
Effect of the spin-orbit interaction is studied for the random potential scattering in two dimensions by the renormalization group method. It is shown that the localization behaviors are classified in the three different types depending on the symmetry. The recent observation of the negative magnetoresistance of MOSFET is discussed.
doi:10.1143/ptp.63.707
fatcat:di4q2ektu5exnm4hbwsswccf5y