Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices

Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Florence Bellenger, Jérome Mitard, Michel Houssa
2009 Materials Research Society Symposium Proceedings  
We present a one-dimensional simulation study of the capacitance-voltage (C-V) and currentvoltage (I-V) characteristics in MOS devices with high mobility semiconductors (Ge and III-V materials) and non-conventional gate stack with high-κ dielectrics. The C-V quantum simulation code self-consistently solves the Schrödinger and Poisson equations and the electron transport through the gate stack is computed using the non-equilibrium Green's function formalism (NEGF). Simulated C-V characteristics
more » ... -V characteristics are successfully confronted to experimental data for various MOS structures with different semiconductors and dielectric stacks. Simulation of I-V characteristics reveals that gate leakage current strongly depends on gate stacks and substrate materials and predicts low leakage current for future CMOS devices with high mobility materials and high-κ dielectrics.
doi:10.1557/proc-1194-a02-02 fatcat:2azu4bvmejfepdksl3pao26qvu