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First Demonstration of Low-Power Vertically Stacked One Time Programmable Multi-bit IGZO-Based BEOL Compatible Ferroelectric TFT Memory Devices with Lifelong Retention for Monolithic 3D-Inference Engine Applications [post]

Sourav De
2022 unpublished

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<div>This paper reports back-end-of-line (BEOL) (process temperature <350°C) compatible vertically stacked indium gallium zinc oxide (IGZO) based multi-bit one-time programmable (OTP) ferroelectric (Fe) thin film transistor (TFT) memory devices with lifelong retention capability for the first time. Further we have evaluated the performance of the IGZO-based OTP Fe-TFT as synaptic devices for monolithic 3D (M3D) inference engine. System level simulation revealed inference accuracy of 97% for
more » ... T data in MLP neural network with maximum accuracy loss of 1.5% over a period of 10 years without re-training. The proposed M3D inference engine also showed superior energy efficiency and cell area of 95.33 TOPS/W (binary) and 8𝐹2 respectively.</div>
doi:10.36227/techrxiv.19491221.v1 fatcat:b5lw2sd7mncgnmcn6awdxjieka
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Citation

Sourav De. "First Demonstration of Low-Power Vertically Stacked One Time Programmable Multi-bit IGZO-Based BEOL Compatible Ferroelectric TFT Memory Devices with Lifelong Retention for Monolithic 3D-Inference Engine Applications." (2022)