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First Demonstration of Low-Power Vertically Stacked One Time Programmable Multi-bit IGZO-Based BEOL Compatible Ferroelectric TFT Memory Devices with Lifelong Retention for Monolithic 3D-Inference Engine Applications
<div>This paper reports back-end-of-line (BEOL) (process temperature <350°C) compatible vertically stacked indium gallium zinc oxide (IGZO) based multi-bit one-time programmable (OTP) ferroelectric (Fe) thin film transistor (TFT) memory devices with lifelong retention capability for the first time. Further we have evaluated the performance of the IGZO-based OTP Fe-TFT as synaptic devices for monolithic 3D (M3D) inference engine. System level simulation revealed inference accuracy of 97% fordoi:10.36227/techrxiv.19491221.v1 fatcat:b5lw2sd7mncgnmcn6awdxjieka