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The polarity asymmetry on the electrical characteristics of the oxides grown on n + polysilicon (polyoxides) was investigated in terms of the oxidation process, the doping level of the lower polysilicon layer, the oxidation temperature and the oxide thickness. It was found that the thin polyoxide prepared by using a low-temperature wafer loading and N2 preannealing process, has a smoother polyoxide/polysilicon interface and exhibits a lower oxide tunneling current, a higher dielectric breakdowndoi:10.1109/16.554805 fatcat:qkvexqhxarfedarirdq7xytvue