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Mikro-Raman-spektroskopische Charakterisierung von CuInSe2-Dünnfilm-Halbleitern / Micro Raman Spectroscopy of CuInSe2 Thin Films
1993
Zeitschrift für Naturforschung. B, A journal of chemical sciences
Preserved Fulltext
Structural properties for Cu—In—Se thin-films for solar cell applications formed by electrochemical deposition at room temperature were studied using Raman-scattering. Reactions among Cu, In and Se to binary compounds and CuInSe2, respectively, were observed. It is concluded that Raman scattering spectroscopy only at low temperature conditions shows the real composition of the electrochemically deposited Cu—In—Se layer. It was also found by Raman spectroscopy that the CuInSe, phase is formed by
doi:10.1515/znb-1993-0601
fatcat:pipv26pw6rbgdonp5oj34mserm