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Theory of the anisotropy of the electron Hall mobility in n-type 4H– and 6H–SiC
Journal of Applied Physics
A theoretical model for the calculation of the anisotropy in the electron Hall mobility is reported for n-type bulk single crystals of 4H-and 6H-SiC for the three distinct Hall measurement configurations: ͑a͒ ͓B ʈ c, jЌc], ͑b͒ ͓BЌc, jЌc], and ͑c͒ ͓BЌc, j ʈ c], where B, j, and c are the directions of the magnetic field, current flow, and c axis of the hexagonal unit cell, respectively. Comparison with experimental results shows that the anisotropy of the electron transport in both 4H-and 6H-SiCdoi:10.1063/1.1305556 fatcat:gtpg5jk5efcsje7hk45qusbu6y