Low-Frequency Contact Noise of GaN Nanowire Device Detected by Cross-Spectrum Technique

Liang-Chen Li, Kuo-Hsun Huang, Jia-An Wei, Yuen-Wuu Suen, Ting-Wei Liu, Chia-Chun Chen, Li-Chyong Chen, Kuei-Hsien Chen
2011 Japanese Journal of Applied Physics  
We report the properties of low-frequency contact noise of multielectrode GaN nanowire (NW) devices. A two-port cross-spectrum technique is used to discriminate the noise of the ohmic contact from that of the NW section. The diameter of the GaN NW is around 100 nm. The Ti/Al electrodes of the NWs are defined by e-beam lithography. The typical resistance of a NW section with a length of 800 nm is about 5.5 k and the two-wire resistance is below 100 k. The results show that the low-frequency
more » ... low-frequency excess noise of the GaN NW is much smaller than that of the current-flowing contact, indicating that the contact noise dominates the noise behavior in our GaN NW devices. A careful study of the noise amplitude (A) of the 1=f noise of different types of NW and carbon nanotube devices, both in our work and in the literature, yields an empirical formula for estimating A from the two-wire resistance of the device. #
doi:10.7567/jjap.50.06gf21 fatcat:iifke2sb2nb3teqitacmlsn25a