Piezoresistive effects of resonant tunneling structure for application in micro-sensors

Wendong Zhang¹, Chenyang Xue¹, Jijun Xiong¹, Bin Xie¹, Tianjie Wei¹, Yong Chen²
2007 Indian Journal of Pure & Applied Physics   unpublished
In this paper, piezoresistive properties of resonant tunneling structure made of undoped InGaAs/AlAs double-barrier quantum layers have been experimentally investigated, and the resonant tunneling structure was grown by molecular beam epitaxy (MBE) on semi-insulation (001)-oriented GaAs substrate. We found that the piezoresistivity of such quantum layers is about one order higher than that of the commonly used silicon structures. Micro accelerometers based on InGaAs/AlAs double-barrier resonant
more » ... tunneling structures have also been designed and fabricated by control hole technique.