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The structural and exchange bias properties of CoFe/IrMn prepared on Si (100) and Si (111) with an Os/Cu buffer layer were investigated. Since the Os (0002) surface mesh has the same atomic arrangement as fcc (111) orientation, and the lattice mismatch between Os (0002) and IrMn (111) is as low as 2.6%, the CoFe/IrMn grown on H-Si(100) showed a strong IrMn (111) diffraction peak, while a very weak IrMn (111) peak appeared on H-Si (111). With increasing Os thickness (d Os ), the IrMn (200) peakdoi:10.1109/tmag.2006.888497 fatcat:ngkan7m3lzehtizby4f2b7gdiy