Editorial Special Issue on "Memory Devices and Technologies for the Next Decade"

Christian Monzio Compagnoni, Jinfeng Kang, Yen-Hao Shih, Pei-Ying Penny Du, Tae-Hun Kim, Chandra Mouli, Joshua Yang, Kaushik Roy
2020 IEEE Transactions on Electron Devices  
T HE expected explosive growth of big data, the Internet of Things, artificial intelligence, and 5G mobile networks will not only challenge but also offer new opportunities to solid-state memories in the next decade. Mainstream technologies such as the 3-D NAND Flash and the 1T-1C DRAM technology will have to keep evolving to prolong their scaling trends and maintain their undisputed leadership in the standalone memory arena. At the same time, other memory technologies may take advantage of the
more » ... ke advantage of the rise of the new market applications, likely changing the balance among cost, performance, and reliability. Phase-change memories (PCM), magnetoresistive random-access memories (MRAM), resistive random-access memories (ReRAM), and ferroelectric memories have the potential to play a role both in the embedded and in the standalone memory market. However, all of them will need innovations to fully demonstrate their longterm performance. Finally, all the memory technologies will have to compete to prove the benefits of new applications and solutions, such as the mixing of storage and computing with in-memory computing, neuromorphic computing, and nonvolatile logic. Within this context, the purpose of this Special Issue is to present an in-depth discussion of the solid-state memory devices and technologies that will have an impact on the electronics world in the next decade. To this aim, this issue contains some invited review papers addressing the present status, the future challenges, and the prospects of the memory solutions that will likely play a leading role in the near future. The first of these invited review papers is by Goda and takes stock of the achievements of the 3-D NAND Flash technology, representing the dominant solid-state nonvolatile memory technology today, presenting also its possible scaling scenarios for the years to come. The second invited review paper is by Spessot and Oh and debates the status, challenges, and prospects of what has long been the most important volatile memory solution for any electronic system, i.e., the 1T-1C DRAM technology. The third invited review paper is by Kim and Lee and addresses the development history, the recent progress, and the future directions of the PCM technology, focusing on its possible role as a storage-class memory.
doi:10.1109/ted.2020.2976406 fatcat:xetqo34scbdlxdx4odtuocoumq