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Progress in Civil, Architectural and Hydraulic Engineering IV
Linewidth control is a critical issue for yield enhancement in semiconductor manufacturing. Most of the existing techniques such as run-to-run control have been developed to control the critical dimension (CD) in photolithography and etching process. However, few studies have addressed the tool behavior that would also affect the result of CD in etching process and the etch bias that is the CD difference between photolithograph and etching process. This study aims to propose a manufacturingdoi:10.1201/b19383-225 fatcat:ltiubystyrae3ewpr6a3hr6mpi