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Ion Implantation in Semiconductors and Other Materials
Implantations of B were employed in conjunction with analysis of B depth distributions with the nuclear reaction, B(n, He) Li, to investigate the diffusion of B in Si in the temperairare range 900 to 1100°C for times of the order of 30 to 120 minutes. The diffusion constant, D, in Si was found to depend upon the B concentration. In order to evaluate the dependence of D upon B •concentration, a series of isoconcentration experiments were conducted in which a "flat" B distribution was produced bydoi:10.1007/978-1-4684-2064-7_23 fatcat:p2utvmj2ajbnffmxz4u3l347ky