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High-resolution x-ray photoelectron spectroscopy ͑XPS͒ at 6 keV photon energy has been realized utilizing high-flux-density x rays from the third generation high-energy synchrotron radiation facility, SPring-8. The method has been applied to analysis of high-k HfO 2 /interlayer/Si complementary metal-oxide-semiconductor gate-dielectric structures. With the high energy resolution and high throughput of our system, chemical-state differences were observed in the Si 1s, Hf 3d, and O 1s peaks fordoi:10.1063/1.1595714 fatcat:u275bzbzvjgk3mhzji5hk5stye