High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems

K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka (+2 others)
2003 Applied Physics Letters  
High-resolution x-ray photoelectron spectroscopy ͑XPS͒ at 6 keV photon energy has been realized utilizing high-flux-density x rays from the third generation high-energy synchrotron radiation facility, SPring-8. The method has been applied to analysis of high-k HfO 2 /interlayer/Si complementary metal-oxide-semiconductor gate-dielectric structures. With the high energy resolution and high throughput of our system, chemical-state differences were observed in the Si 1s, Hf 3d, and O 1s peaks for
more » ... -deposited and annealed samples. The results revealed that a SiO x N y interlayer is more effective in controlling the interface structure than SiO 2 . Our results show the wide applicability of high resolution XPS with hard x rays from a synchrotron source.
doi:10.1063/1.1595714 fatcat:u275bzbzvjgk3mhzji5hk5stye