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Magneto-Hall and magnetoresistance coefficients in semiconductors with mixed conductivity
1982
Physical Review B (Condensed Matter)
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Magneto-Hall and magnetoresistance formulas, correct to order 8, are derived for the case in which both single-carrier and mixed-carrier effects are important. Also, a new magneto-Hall coefficIent Is Presented: P -(~)(~)2/(~) 1 Values of'P for varIous scattering mechanisms are calculated and compared with experiment. The electron and hole currents in an isotropic semiconductor with spherical equal-energy surfaces can be @written as o. "oo. n ho. n
doi:10.1103/physrevb.25.2920
fatcat:wnhfjonl3vef5ovkt25xdq3z54