TiN metal hardmask etch residue removal with mask pullback and complete mask removal for Cu dual damascene device

Hua Cui
2012 2012 SEMI Advanced Semiconductor Manufacturing Conference  
Formulations with TiN/Cu etch rate selectivity greater than 60 at 40 °C for TiN pullback and 200 at 55° C for complete TiN mask removal, respectively, have been developed. The formulations are compatible with Cu, low-k and SiON materials, and prevent Cu re-oxidation.
doi:10.1109/asmc.2012.6212916 fatcat:pj3p3agcfffmxoz67e64jbgk6u