Comparative accuracy study of current-mode versus voltage mode analog memory in 0.25 $\mu m$ technology [article]

F Braun, J Michel, F Vautrin
2000
The aim of this work is the study of switched-current and voltage-mode memory cells in order to develop a model including non-ideal effects such as charge injections, nonlinear capacitance and readout system influence. These models will allow non-linearity control regard to surface, speed and power criteria in digital dedicated submicrometer technology. Such models lead to a memory cell optimization in order to include it in an analog memory. The goal of our work is to identify accuracy limits
more » ... fy accuracy limits that can be reached with minimum size architectures in a deep submicrometer technology (0.25 µm) for both types of cells: voltage mode and current mode. By studying operating phases of each cell, we have developed theoretical models that include non-linear effects.
doi:10.5170/cern-2000-010.530 fatcat:pksrghircjdxrev7s6slczilde