lNTRODUCTION Two steps appear d u r i n g t h e nucleation o f b inary e u t e c t i c a l l o y s . F i r s t , primary n u c l e a t i o n involves the c r e a t i o n o f a c r y s t a l i n the supercooled l i q u i d , then be1 ow e u t e c t i c temperature the nuclea t i o n o f the second phase takes place, e i t h e r on t h e primary phase b y heterogeneous n u c l e a t i o n o r independently w i t h i n t h e 1 i q u i d . The r e s u l t a n t sol i d i f i c a t i o n s t r u c t

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... u r e w i l l vary f o r those two d i ff e r e n t ways o f e u t e c t i c nucleation. I n t h i s paper we w i l l analyse the general nucleation b e h a v i o u r o f metal semiconductor e u t e c t i c a1 l o y s w i t h more emphas i s t o t h e Ag-Ge and Al-Ge systems.