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Limits to mobility in InAs quantum wells with nearly lattice-matched barriers
2016
Physical review B
The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al_1-xGa_xSb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of the possible scattering mechanisms indicate the
doi:10.1103/physrevb.94.245306
fatcat:22kqogwtuzfixmbdg4y57dl47i