Investigation of X-ray photon-counting using ceramic-substrate silicon diode and its application to gadolinium imaging

Yumeka Arakawa, Eiichi Sato, Hayato Kogita, Tatsuki Hamaya, Shinichi Nihei, Wataru Numahata, Syouta Kami, Yasuyuki Oda, Osahiko Hagiwara, Hiroshi Matsukiyo, Akihiro Osawa, Toshiyuki Enomoto (+4 others)
2014 Japanese Journal of Applied Physics  
X-ray photon counting was performed using a silicon X-ray diode (Si-XD) at tube voltages ranging from 20 to 100 kV. The Si-XD is a high-sensitivity Si photodiode selected for detecting X-ray photons, and the photons are directly counted using the Si-XD. Photocurrent from the diode is amplified using charge-sensitive and shaping amplifiers. To investigate the X-ray-electric conversion, we measured event-pulse-height (EPH) spectra using a multichannel analyzer (MCA). In the EPH spectra, the
more » ... spectra, the maximum photon energy corresponded to the tube voltage, and the photon count substantially increased with decreasing photon energy. Photon-counting computed tomography (PC-CT) is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by the linear scan at a tube current of 2.0 mA. At a tube voltage of 100 kV, the gadolinium K-edge imaging was accomplished with an energy range of 50-100 keV.
doi:10.7567/jjap.53.072201 fatcat:5cy2pxk2mjeglcgmhaskl3ijia