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Development of high quantum efficiency GaAs/GaInP double heterostructures for laser cooling
2013
Applied Physics Letters
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We report on the growth and characterization of high external quantum efficiency (EQE) GaAs/ GaInP double heterostructures. By properly treating the GaAs/GaInP interface, we are able to produce structures measuring a record EQE of 99.5% 6 0.1% in GaAs. This efficiency exceeds the requirement for achieving laser cooling in GaAs. However, net cooling has not yet been realized due to residual below gap background absorption. V C 2013 AIP Publishing LLC.
doi:10.1063/1.4811759
fatcat:vgoe4b6b6je3tnlqcjzcv2oyuu