Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS—HEMT

Wei Mao, Cui Yang, Yao Hao, Jin-Cheng Zhang, Hong-Xia Liu, Zhi-Wei Bi, Sheng-Rui Xu, Jun-Shuai Xue, Xiao-Hua Ma, Chong Wang, Lin-An Yang, Jin-Feng Zhang (+1 others)
2011 Chinese Physics B  
We present an AlInN/AlN/GaN MOS-HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al 2 O 3 dielectric layer and a 0.3 µm field-plate (FP)-MOS-HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS-HEMT with a 0.6 µm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude)
more » ... d the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS-HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance-voltage (C-V ) curve of the FP-MOS-HEMT demonstrates a high-quality interface of Al 2 O 3 /AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/µm and a negligible double-pulse current collapse is achieved in the FP-MOS-HEMT. This is attributed to the adoption of an ultra-thin Al 2 O 3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al 2 O 3 FP-MOS-HEMT to deliver high currents and power densities in high power microwave technologies.
doi:10.1088/1674-1056/20/1/017203 fatcat:psioxcek3bgnzjz5h4lsfk2ega