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Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS—HEMT
2011
Chinese Physics B
We present an AlInN/AlN/GaN MOS-HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al 2 O 3 dielectric layer and a 0.3 µm field-plate (FP)-MOS-HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS-HEMT with a 0.6 µm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude)
doi:10.1088/1674-1056/20/1/017203
fatcat:psioxcek3bgnzjz5h4lsfk2ega