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In this paper based on recently introduced approach we formulated some recommendations to optimize manufacture drift bipolar transistor to decrease their dimensions and to decrease local overheats during functioning. The approach based on manufacture a heterostructure, doping required parts of the heterostructure by dopant diffusion or by ion implantation and optimization of annealing of dopant and/or radiation defects. The optimization gives us possibility to increase homogeneity ofdoi:10.5121/ijcsa.2014.4503 fatcat:mui7c7ctrbdjxa7wgc5wqcfojy